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mrf6vp41khr6 MRF6VP41KHSR6 1 rf device data freescale semiconductor ? rf power field effect transistors n - channel enhancement - mode lateral mosfets designed primarily for pulsed wideband applications with frequencies up to 450 mhz. devices are unmatched and are suitable for use in industrial, medical and scientific applications. ? typical pulsed performance at 450 mhz: v dd = 50 volts, i dq = 150 ma, p out = 1000 watts peak, pulse width = 100 sec, duty cycle = 20% power gain ? 20 db drain efficiency ? 64% ? capable of handling 10:1 vswr, @ 50 vdc, 450 mhz, 1000 watts peak power features ? qualified up to a maximum of 50 v dd operation ? integrated esd protection ? excellent thermal stability ? designed for push - pull operation ? greater negative gate - source voltage range for improved class c operation ? rohs compliant ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +110 vdc gate - source voltage v gs - 6, +10 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c document number: mrf6vp41kh rev. 0, 1/2008 freescale semiconductor technical data mrf6vp41khr6 MRF6VP41KHSR6 10 - 450 mhz, 1000 w, 50 v lateral n - channel broadband rf power mosfets case 375d - 05, style 1 ni - 1230 mrf6vp41khr6 parts are push - pull (top view) rf outa /v dsa 31 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb figure 1. pin connections case 375e - 04, style 1 ni - 1230s MRF6VP41KHSR6 ? freescale semiconductor, inc., 2008. all rights reserved.
2 rf device data freescale semiconductor mrf6vp41khr6 MRF6VP41KHSR6 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 1000 w pulsed, 100 sec pulse width, 20% duty cycle r jc 0.03 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 2 (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (3) gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 10 adc drain - source breakdown voltage (i d = 300 ma, v gs = 0 vdc) v (br)dss 110 ? ? vdc zero gate voltage drain leakage current (v ds = 50 vdc, v gs = 0 vdc) i dss ? ? 100 adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs = 0 vdc) i dss ? ? 5 ma on characteristics gate threshold voltage (3) (v ds = 10 vdc, i d = 1600 adc) v gs(th) 1 1.68 3 vdc gate quiescent voltage (4) (v dd = 50 vdc, i d = 150 madc, measured in functional test) v gs(q) 1.5 2.2 3.5 vdc drain - source on - voltage (3) (v gs = 10 vdc, i d = 4 adc) v ds(on) ? 0.28 ? vdc dynamic characteristics (3) reverse transfer capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 3.3 ? pf output capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 147 ? pf input capacitance (v ds = 50 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 506 ? pf functional tests (4) (in freescale test fixture, 50 ohm system) v dd = 50 vdc, i dq = 150 ma, p out = 1000 w peak (200 w avg.), f = 450 mhz, 100 sec pulse width, 20% duty cycle power gain g ps 19 20 22 db drain efficiency d 60 64 ? % input return loss irl ? -18 -9 db 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. 3. each side of device measured separately. 4. measurement made with device in push - pull configuration.
mrf6vp41khr6 MRF6VP41KHSR6 3 rf device data freescale semiconductor figure 2. mrf6vp41khr6 test circuit schematic z14*, z15* 0.764 x 0.150 microstrip z16, z17 0.290 x 0.430 microstrip z18, z19 0.100 x 0.430 microstrip z20, z21, z22, z23 0.080 x 0.430 microstrip z24 0.257 x 0.215 microstrip pcb arlon cuclad 250gx - 0300 - 55 - 22, 0.030 , r = 2.55 * line length includes microstrip bends z1 0.366 x 0.082 microstrip z2*, z3* 0.170 x 0.100 microstrip z4*, z5* 0.220 x 0.451 microstrip z6, z7 0.117 x 0.726 microstrip z8*, z9* 0.792 x 0.058 microstrip z10, z11 0.316 x 0.726 microstrip z12, z13 0.262 x 0.507 microstrip rf input z4 c5 z5 c6 z1 dut v supply z13 rf output z24 v bias z9 z2 z3 z15 z14 b1 c22 c24 z18 z20 c25 c28 c29 + coax1 coax2 coax3 coax4 z22 c1 + l1 c7 c8 z6 z7 c23 c21 c20 c19 z23 c18 z21 c17 z19 c16 c9 c10 z10 z11 l2 b2 c11 + c13 c12 c14 z8 c3 c2 c4 z12 z16 z17 c15 c26 c27 c30 + v bias v supply c31 c34 c35 + c32 c33 c36 + l3 l4 table 5. mrf6vp41khr6 test circuit component designations and values part description part number manufacturer b1, b2 47 , 100 mhz short ferrite beads 2743019447 fair - rite c1, c11 47 f, 50 v electrolytic capacitors 476kxm063m illinois c2, c12, c28, c34 0.1 f chip capacitors cdr33bx104akys kemet c3, c13, c27, c33 220 nf, 50 v chip capacitors c1812c224k5rac kemet c4, c14 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c5, c6, c8, c15 27 pf chip capacitors atc100b270jt500xt atc c7, c10 0.8 - 8.0 pf variable capacitors 27291sl johanson components c9 33 pf chip capacitor atc100b330jt500xt atc c16 12 pf chip capacitor atc100b120jt500xt atc c17 10 pf chip capacitor atc100b100jt500xt atc c18 9.1 pf chip capacitor atc100b9r1ct500xt atc c19 8.2 pf chip capacitor atc100b8r2ct500xt atc c20, c21, c22, c23, c25, c32 240 pf chip capacitors atc100b241jt200xt atc c24 5.6 pf chip capacitor atc100b5r6ct500xt atc c26, c31 2.2 f, 100 v chip capacitors 2225x7r225kt3ab atc c29, c30, c35, c36 330 f, 63 v electrolytic capacitors emvy630gtr331mmh0s multicomp coax1, 2, 3. 4 25 semi rigid coax, 2.2 long ut - 141c- 25 micro - coax l1, l2 2.5 nh, 1 turn inductors a01tklc coilcraft l3, l4 43 nh, 10 turn inductors b10tjlc coilcraft
4 rf device data freescale semiconductor mrf6vp41khr6 MRF6VP41KHSR6 figure 3. mrf6vp41khr6 test circuit component layout cut out area mrf6vp41kh rev. 1 coax1 c1 b1 c2 c3 c4 l1 c5 c6 coax2 c7 c8 c9 c10 c11 b2 c12 c13 c14 c33 c34 c36 c35 c31 c32 l4 coax3 coax4 c15 c16 c17 c19 c18 c24 c22 c23 c21 c20 l3 c25 c26 c27 c28 c29 c30 l2
mrf6vp41khr6 MRF6VP41KHSR6 5 rf device data freescale semiconductor typical characteristics 50 1 1000 020 10 v ds , drain?source voltage (volts) figure 4. capacitance versus drain - source voltage c, capacitance (pf) 30 c iss 100 10 40 c oss c rss measured with 30 mv(rms)ac @ 1 mhz v gs = 0 vdc 1 100 1 t c = 25 c 10 10 v ds , drain?source voltage (volts) figure 5. dc safe operating area i d , drain current (amps) 100 200 t j = 200 c t j = 175 c t j = 150 c 21 1 0 80 10 18 16 14 70 60 50 40 30 p out , output power (watts) pulsed figure 6. pulsed power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) d 17 15 13 1000 2000 g ps 20 55 65 34 63 62 61 p in , input power (dbm) pulsed figure 7. pulsed output power versus input power 64 60 44 59 19 58 57 35 36 37 38 39 40 41 42 p out , output power (dbm) p3db = 60.70 dbm (1174.89 w) actual ideal p1db = 60.33 dbm (1078.94 w) 17 23 10 20 19 p out , output power (watts) pulsed figure 8. pulsed power gain versus output power g ps , power gain (db) 100 18 i dq = 6000 ma 1000 2000 3600 ma 1500 ma 150 ma 375 ma 750 ma figure 9. pulsed power gain versus output power p out , output power (watts) pulsed g ps , power gain (db) v dd = 30 v 12 22 0 16 35 v 20 45 v 200 400 600 800 1000 1200 1400 50 v 40 v 20 100 10 56 43 21 22 14 18 v dd = 50 vdc i dq = 150 ma f = 450 mhz pulse width = 100 sec duty cycle = 20% v dd = 50 vdc i dq = 150 ma f = 450 mhz pulse width = 100 sec duty cycle = 20% v dd = 50 vdc f = 450 mhz pulse width = 100 sec duty cycle = 20% i dq = 150 vdc, f = 450 mhz pulse width = 100 sec duty cycle = 20%
6 rf device data freescale semiconductor mrf6vp41khr6 MRF6VP41KHSR6 typical characteristics 45 35 65 20 25 c t c = ?30 c 85 c 35 25 55 50 p in , input power (dbm) pulsed figure 10. pulsed output power versus input power p out , output power (dbm) 30 40 60 22 1 0 100 100 17 15 13 70 60 50 40 30 p out , output power (watts) pulsed figure 11. pulsed power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) d 16 14 12 1000 2000 25 c t c = ?30 c 85 c 20 250 10 7 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 50 vdc, p out = 1000 w peak, pulse width = 100 sec, duty cycle = 20%, and d = 64%. mttf calculator available at http:/www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 6 10 5 10 4 110 130 150 170 190 mttf (hours) 210 230 18 g ps 45 40 19 20 21 10 80 90 10 v dd = 50 vdc i dq = 150 ma f = 450 mhz pulse width = 100 sec duty cycle = 20% v dd = 50 vdc i dq = 150 ma f = 450 mhz pulse width = 100 sec duty cycle = 20%
mrf6vp41khr6 MRF6VP41KHSR6 7 rf device data freescale semiconductor z o = 2 z load f = 450 mhz z source f = 450 mhz v dd = 50 vdc, i dq = 150 ma, p out = 1000 w peak f mhz z source z load 450 0.86 + j1.06 1.58 + j1.22 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 13. series equivalent source and load impedance z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor mrf6vp41khr6 MRF6VP41KHSR6 package dimensions
mrf6vp41khr6 MRF6VP41KHSR6 9 rf device data freescale semiconductor
10 rf device data freescale semiconductor mrf6vp41khr6 MRF6VP41KHSR6
mrf6vp41khr6 MRF6VP41KHSR6 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor mrf6vp41khr6 MRF6VP41KHSR6 product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 jan. 2008 ? initial release of data sheet
mrf6vp41khr6 MRF6VP41KHSR6 13 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6vp41kh rev. 0, 1/2008

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